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The choice of furnace and growth method depends on factors such as the type of semiconductor material (e.g., silicon, germanium, gallium arsenide, silicon carbide), the desired crystal size and purity, and the specific application in chip manufacturing.
Crystal Growth Equipment: The process begins with the creation of high-purity silicon ingots, often achieved through the Czochralski (CZ) method, where a seed crystal is used to grow a large, single-crystal silicon cylinder from molten silicon. Key suppliers of crystal growth equipment include Linton Crystal Technologies, based in the USA , and PVA TePla and SGL Carbon, both headquartered in Germany. MSE Supplies, also in the USA, is another supplier in this domain. Additionally, there are suppliers located in Russia, China, and Japan that offer crystal growth furnaces. The significant presence of US and German suppliers in this foundational equipment category suggests a long history of innovation and manufacturing strength in these regions for the initial steps of wafer production.
Crystal Growing primary methods:
Crystal Growing primary methods:
There are several crystal growth methods based on the specific requirements of the semiconductor material being produced.
Czochralski (CZ) Method: A seed crystal is dipped into a melt of the material and slowly pulled upwards while rotating, allowing a large, single crystal to grow. This is widely used for silicon.
Bridgman Method: The material is melted in a container with a pointed end and then slowly cooled from the pointed end, allowing a single crystal to grow along the length of the container. This method is suitable for materials difficult to grow by other techniques.
Floating Zone (FZ) Method: A rod of polycrystalline material is passed through a heating coil, creating a small molten zone. As the zone moves along the rod, impurities are swept away, resulting in a high-purity single crystal. This is also used for silicon to achieve very high purity.
Stepanov Method (Edge-defined Film-fed Growth - EFG): This technique allows for the growth of crystals with specific shapes by controlling the shape of the melt through a die.
Linton Crystal Technologies: Specializes in Czochralski (CZ) furnaces, a widely used method for silicon crystal growth. Their furnaces are known for high-speed growth and are customizable to different ingot sizes.
Materials Research Furnaces (MRF): Offers a range of crystal growth furnaces utilizing CZ, Bridgman, and Stepanov methods. They provide systems for silicon, sapphire, and germanium crystal growth, including custom designs.
Materials Research Furnaces makes Arc Melt Furnace ABJ-900-3 with the Crystal Growth. The crystal growth components are set up to grow single crystals of semiconductor materials, metals, salts and synthetic gemstones using the Czochralski method.
Across International: Supplies Bridgman crystal growth furnaces suitable for semiconductor crystals like silicon, germanium, and gallium arsenide, as well as other crystalline materials.
Thermal Technology LLC: Custom manufactures crystal growth furnaces with a focus on consistent melts and zone refining capabilities.
ECM Technologies (including ECM Greentech and Cyberstar): A group of companies that design and manufacture crystal growth equipment, including furnaces for silicon and other materials, with a focus on solutions for the photovoltaic and semiconductor industries.
SECO/WARWICK Group: Produces various types of furnaces, including those for directional solidification and crystal growth, serving industries like aerospace, energy, and semiconductors.
TanKeBlue Semiconductor Co., Ltd.: A China-based company that independently researches, develops, designs, and manufactures SiC (silicon carbide) monocrystalline growth furnaces.
EastCarbon: A manufacturer in China that produces single crystal furnaces for materials like silicon and germanium, which are fundamental to semiconductor manufacturing.
MSE Supplies: Offers a variety of crystal growth furnaces for different materials and methods, including those suitable for semiconductor crystal growth.
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